High Reverse Breakdown a-C:H/Si Diodes Manufactured by rf-PECVD
نویسندگان
چکیده
منابع مشابه
RF-Breakdown in High-Frequency Accelerators
RF breakdown in high-frequency accelerators appears to limit the maximum achievable gradient as well as the reliability of such devices. Experimental results from high power tests, obtained mostly in the framework of the NLC/GLC project at 11 GHz and from the CLIC study at 30 GHz, will be used to illustrate the important issues. The dependence of the breakdown phenomena on rf pulse length, oper...
متن کاملHighly Ordered Amorphous Silicon-Carbon Alloys Obtained by RF PECVD
We have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-SiC chemical order. Motivated by this trend, we further explore the e ect of increasing RF power and H2 dilution of the gaseous mixtures, aiming to obtain the amorphous counterpart of c-SiC by the RF-PECVD technique. Doping experiments...
متن کاملHigh Current Density in μc-Si PECVD Diodes for Low Temperature Applications
The development of microcrystalline diodes grown at low temperature by PECVD techniques is reported. Current densities near 200 A/cm at + 2 V, and rectification ratios on the order of 10 at +/1V and 10 at +/2V were obtained. The reverse currents were in the nanoampere range. Correlations between deposition cond itions and film quality are presented. The effects of mesa formation and subsequent ...
متن کاملHigh breakdown single-crystal GaN p-n diodes by molecular beam epitaxy
Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm is obtained with reverse bias voltage up to !20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mX cm is achieved, with a breakdown voltage corresponding to a peak electric field of "3.1 MV/cm in GaN. Single-crystal GaN substrates with very low d...
متن کاملHighly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure
In this paper we present a study of boron-doped nc-Si:H films prepared by PECVD at high deposition pressure ( 4 mbar), high plasma power and low substrate temperature ( 200 C) using trimethylboron (TMB) as a dopant gas. The influence of deposition parameters on electrical, structural and optical properties is investigated. We determine the deposition conditions that lead to the formation of p-t...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: MRS Proceedings
سال: 1999
ISSN: 0272-9172,1946-4274
DOI: 10.1557/proc-593-427